13 August 1993 Doping effect on optical recording film with Ge2Sb2Te5 composition
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Proceedings Volume 2053, Optical Storage (ISOS '92); (1993) https://doi.org/10.1117/12.150646
Event: Optical Storage: Third International Symposium, 1992, Kunming, Yunnan Province, China
Abstract
In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely to improve the data retention time and the repetition cycles, but its mechanism is not clear. To clarify the effect of excess Sb, the effects of Te and Ge addition were also investigated in the compositions from the stoichiometry Ge2Sb2Te5 toward the vertices in the Ge-Te-Sb triangle. By DSC measurements, it was found that a retention ability for amorphous (`write') states related to the increase of repetition cycles is larger in the Sb addition than in the Te and Ge addition. By XRD measurements, it was understood that an optimum ratio of (Sb,Te)(beta) /GeTe(111), about 0.5 was necessary to static repetition cycles approximately 106 in the laser annealed film of 1000 angstroms thick.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuhiko Matsushita, Tatsuhiko Matsushita, Akio Suzuki, Akio Suzuki, Takayuki Kamitani, Takayuki Kamitani, Masahiro Okuda, Masahiro Okuda, } "Doping effect on optical recording film with Ge2Sb2Te5 composition", Proc. SPIE 2053, Optical Storage (ISOS '92), (13 August 1993); doi: 10.1117/12.150646; https://doi.org/10.1117/12.150646
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