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13 August 1993 Ferroelectric phase transition of Te alloy films and its optical disk properties
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Proceedings Volume 2053, Optical Storage (ISOS '92); (1993)
Event: Optical Storage: Third International Symposium, 1992, Kunming, Yunnan Province, China
In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely in order to improve the crystallization speed, the data retention time, and the stability of cyclic operation, but its mechanism is not clear. V-VI compounds (GeTe, SnTe) are well known as compounds in which the ferroelectric structural phase transition occurs. The dielectric constant (epsilon) 0 changes largely due to a change in the short-range order of weakly bound nearest neighbors in the crystal to more strongly bound nearest neighbors in the amorphous phase. Therefore, it is necessary to discuss the effect of Sb addition in the stoichiometric GeTe-Sb2Te3 composition upon the dynamic properties of crystallization and the dielectric constant change (Delta) (epsilon) 0 based on the ferroelectric phase transition.
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Masahiro Okuda, Hiroyoshi Naito, and Tatsuhiko Matsushita "Ferroelectric phase transition of Te alloy films and its optical disk properties", Proc. SPIE 2053, Optical Storage (ISOS '92), (13 August 1993);

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