31 December 1993 Process monitoring during metalorganic chemical vapor deposition using FTIR spectroscopy
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Proceedings Volume 2069, Optical Methods for Chemical Process Control; (1993) https://doi.org/10.1117/12.166275
Event: Optical Tools for Manufacturing and Advanced Automation, 1993, Boston, MA, United States
Abstract
The ability of Fourier transform infrared spectroscopy to perform in-situ measurements of ferroelectric thin film properties during metalorganic chemical vapor deposition is demonstrated. Infrared measurements of film reflectance and radiance allowed determination of film composition, thickness and temperature in real-time. These spectra could also be used to follow process changes, determine deposition rate, and extract the wavelength dependent dielectric function. These data, along with computer software and optical hardware developments, are presented.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stuart Farquharson, Stuart Farquharson, Robert M. Carangelo, Robert M. Carangelo, John R. Haigis, John R. Haigis, Philip W. Morrison, Philip W. Morrison, Peter R. Solomon, Peter R. Solomon, Peter S. Kirlin, Peter S. Kirlin, Peter C. Van Buskirk, Peter C. Van Buskirk, } "Process monitoring during metalorganic chemical vapor deposition using FTIR spectroscopy", Proc. SPIE 2069, Optical Methods for Chemical Process Control, (31 December 1993); doi: 10.1117/12.166275; https://doi.org/10.1117/12.166275
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