15 February 1994 Defect engineering in doped silica fiber: are there good and bad defects?
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Proceedings Volume 2073, Fiber Laser Sources and Amplifiers V; (1994); doi: 10.1117/12.168609
Event: Optical Tools for Manufacturing and Advanced Automation, 1993, Boston, MA, United States
Abstract
The defect driven properties of erbium doped fiber amplifier devices are reviewed examining the role of the host dopants, aluminum, phosphorus and germanium, typically used in these applications. The effects of added loss on the performance of amplifiers are shown by way of modeling. Measurements of the gamma and UV radiation induced absorption are presented to show the generic host glass composition effects on radiation induced loss and their relative magnitude. In contrast to these `bad' defects, the UV induced effects in H2 impregnated fiber are discussed in their role as `good' defects, allowing the more efficient writing of UV induced gratings.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jay R. Simpson, Paul F. Wysocki, Matthijs M. Broer, Robert M. Atkins, Paul J. Lemaire, "Defect engineering in doped silica fiber: are there good and bad defects?", Proc. SPIE 2073, Fiber Laser Sources and Amplifiers V, (15 February 1994); doi: 10.1117/12.168609; https://doi.org/10.1117/12.168609
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KEYWORDS
Optical amplifiers

Ultraviolet radiation

Amplifiers

Absorption

Erbium

Fiber amplifiers

Radiation effects

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