Paper
15 February 1994 Development for deep-UV pellicles
Tokinori Ago, Hiroaki Nakagawa
Author Affiliations +
Abstract
The design concept for 64 M is 0.35 micrometers and finer than wavelength of i-line (365 nm), and i-line is not applicable to 64 M production. Various methods have been investigated to achieve 0.35 micrometers resolution: (1) To improve the resolution by using the phase shift, or special illumination technique, etc. (2) To improve the resolution by using short wavelength light of excimer laser or deep UV of UV-II. Mitsui began the development of the pellicles for KrF-excimer laser (248 nm) and deep UV of UV-II (245 - 252 nm) in the fall of 1989. This report describes the deep UV pellicles, which Mitsui has developed for excimer laser and deep UV focusing on light resistance properties.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tokinori Ago and Hiroaki Nakagawa "Development for deep-UV pellicles", Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); https://doi.org/10.1117/12.167261
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Cited by 1 scholarly publication.
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KEYWORDS
Resistance

Pellicles

Deep ultraviolet

Photomask technology

Excimer lasers

Adhesives

Aluminum

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