15 February 1994 Dry etch patterning of chrome on glass optical masks using P(SI-CMS) resist
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Poly(trimethylsilylmethyl methacrylate-co-chloromethylstyrene) P(SI-CMS) has been designed to function as a negative-acting electron beam sensitive resist. This material is shown to be applicable to processes in which the chrome layer of 1X, 5X, and phase shifting masks is patterned via plasma etching. P(SI-CMS) containing 90 mole % trimethylsilylmethyl methacrylate and 10 mole % chloromethylstyrene exhibits thermal properties (Tg > 80 degree(s)C; Td > 250 degree(s)C) which provide stability in reactive ion etch environments. In a Cl2 - O2 plasma P(SI.90-CMS.10) resist etches a factor of 4.25 slower than chromium, and 16 times slower than novolac based resists.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anthony E. Novembre, Anthony E. Novembre, David A. Mixon, David A. Mixon, Christophe Pierrat, Christophe Pierrat, Chester S. Knurek, Chester S. Knurek, Michael W. Stohl, Michael W. Stohl, "Dry etch patterning of chrome on glass optical masks using P(SI-CMS) resist", Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); doi: 10.1117/12.167248; https://doi.org/10.1117/12.167248


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