Electron-beam lithography optimization for 0.25-um x-ray mask making

Denise M. Puisto

doi:10.1117/12.167282

15 February 1994 Electron-beam lithography optimization for 0.25-um x-ray mask making

Denise M. Puisto

Proceedings Volume 2087, 13th Annual BACUS Symposium on Photomask Technology and Management; (1994) https://doi.org/10.1117/12.167282
Event: 13th Annual BACUS Symposium on Photomask Technology and Management, 1993, Santa Clara, CA, United States

Abstract

The use of electron-beam lithography for x-ray mask making requires an advanced system optimized for geometries of 0.25 micrometers and below. IBM's advanced mask facility in Essex Junction, Vermont, uses a variable-shaped-spot electron-beam lithography system known as EL-3+ to fabricate 1X x-ray membrane masks. The specifications of this system include 0.35-micrometers minimum features and 100-nm image placement (3(sigma) to absolute grid). Image-placement distortion and image-resolution errors on the E-beam system have been analyzed and minimized using unique methods, extending the system's capability into the 0.25-micrometers -feature-size range and improving placement to under 70 nm. This paper gives a brief overview of the x-ray mask-making process and methods used in the E-beam lithography area to correct for known errors; some results obtained using these methods are also presented.

Citation Download Citation

Denise M. Puisto "Electron-beam lithography optimization for 0.25-um x-ray mask making", Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994); https://doi.org/10.1117/12.167282

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