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15 February 1994 Metrology hardware simulation of mask focus-exposure matrix
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Previous studies described the Depth Resonance Function (DRF) capabilities to understand and control defocus effects of a CD metrology system. This paper discusses the important properties of the DRF and how these properties affect the linewidth metrology process for photomasks built for submicron lithography. The DRF is used to investigate how various metrology process parameters change the response of the CD metrology system. The response of the CD metrology system is then presented as `Focus-Illumination' curves. Such CD results are compared to typical Bossung F-E curves to determine to what extent the metrology Focus- Illumination curves can simulate mask aerial image degradation that occurs during normal stepper exposure process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mircea V. Dusa, Guoqing Xiao, and Erik H. Rauch "Metrology hardware simulation of mask focus-exposure matrix", Proc. SPIE 2087, 13th Annual BACUS Symposium on Photomask Technology and Management, (15 February 1994);

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