Application of so-called negative beam Fourier transform spectroscopy to the investigation of semiconductors

Alexander I. Belogorokhov; Lubov I. Belogorokhova

doi:10.1117/12.166576

31 January 1994 Application of so-called "negative beam" Fourier transform spectroscopy to the investigation of semiconductors

Alexander I. Belogorokhov, Lubov I. Belogorokhova

Author Affiliations +

Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166576
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada

Abstract

Negative-beam (NB) FTIR measurements are made with no radiation source but with the sample and detector at different temperatures. They are a powerful tool in the study of thermo- stimulated effects in semiconductors without light excitation. They can be used to separate the influence of either photo-generated carriers or possible metastable transformations of impurities, lattice defects, etc. from thermo-induced processes in semiconductors. Moreover observations of stimulated emission from a semiconductor in the far-infrared (FIR) spectral range have only been reported so far at energies well above the multi-phonon energies. This is because the probability of FIR emission is strongly reduced due to non-radiative recombination channels like Auger processes which are strongly enhanced with decreasing band gap energy. Below the energy of the longitudinal optic (LO) phonons,optical emission becomes probable again since LO-phonon assisted scattering processes are energy forbidden.

Citation Download Citation

Alexander I. Belogorokhov and Lubov I. Belogorokhova "Application of so-called "negative beam" Fourier transform spectroscopy to the investigation of semiconductors", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166576

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