31 January 1994 Chemical-bond analysis of hydrogen-rich silicon oxynitride
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Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994); doi: 10.1117/12.166632
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada
Abstract
We present measurements of the infrared absorption of Si-H, N-H, N-H2, and Si-N bonds in silicon oxynitride films. The shift of the position of the absorption bands in the spectra of different samples is related to the atomic environment of the bonds in each film.
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Adele Sassella, Alessandro Borghesi, S. Rojas, Luca Zanotti, "Chemical-bond analysis of hydrogen-rich silicon oxynitride", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166632; https://doi.org/10.1117/12.166632
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KEYWORDS
Silicon

Chemical species

Absorption

Chemical analysis

Infrared spectroscopy

Silicon carbide

Chemical vapor deposition

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