Paper
31 January 1994 Fourier transform infrared spectroscopic analysis of spin-on dopant layers used in proximity rapid thermal diffusion
Fernando Romero-Borja, Piotr B. Grabiec, Wanda Zagozdzon-Wasik, Lowell L. Wood
Author Affiliations +
Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166690
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada
Abstract
A new rapid thermal diffusion (proximity RTD) method, utilizing spin-on dopant (SOD) layers, was reported recently. This technique is based on an evaporation-gas phase diffusion- adsorption-surface reaction-diffusion in Si scheme. In this paper we use FTIR spectroscopy to investigate a relationship between the SOD layer structure/composition and its doping efficiency, as determined by sheet resistance (RS) measurements, for a phosphorus diffusion case.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fernando Romero-Borja, Piotr B. Grabiec, Wanda Zagozdzon-Wasik, and Lowell L. Wood "Fourier transform infrared spectroscopic analysis of spin-on dopant layers used in proximity rapid thermal diffusion", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166690
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diffusion

FT-IR spectroscopy

Semiconducting wafers

Silicon

Spectroscopy

Doping

Phosphorus

Back to Top