31 January 1994 Fourier transform infrared absorption spectrum of beryllium acceptor impurities in silicon
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Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166627
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada
Abstract
The group-II element beryllium when introduced into silicon forms more than one acceptor center. Their infrared absorption spectra have been investigated using a high-resolution FTIR spectrometer.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lawrence T. Ho, F. Y. Lin, W. J. Lin, "Fourier transform infrared absorption spectrum of beryllium acceptor impurities in silicon", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166627; https://doi.org/10.1117/12.166627
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