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31 January 1994 Photoluminescence of 2D excitons in Ge layers of Ge-Ge1-xSix superlattices
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Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166807
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada
Abstract
This work reports first observation of a 2D-exciton luminescence in thin (8 - 25 nm) Ge layers of Ge-Ge1-xSix multiple quantum well structures grown on Ge [111] substrates. Photoluminescence spectra was studied at temperatures 2 - 300 K using a BOMEM DA3.36 Fourier-transform spectrometer with a cooled InSb detector, and use of a Nd:YAG laser radiation ((lambda) equals 1.06 micrometers ) for excitation. The shape of the luminescence spectral lines was corrected by black body calibration of the spectrometer.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. G. Kalugin, L. K. Orlov, Oleg A. Kuznetsov, and A. L. Chernov "Photoluminescence of 2D excitons in Ge layers of Ge-Ge1-xSix superlattices", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166807
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