31 January 1994 Preparation of atomically smooth Ge substrates for combined IR spectroscopy and scanning probe microscopy of organic monolayers
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Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166681
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada
Abstract
We have investigated whether large ATR crystals of Ge can be made atomically flat and resistant to atmospheric oxidation, thus enabling us to use them simultaneously as an IR- transparent ATR waveguide and a scanning probe conducting substrate. A protocol has been developed for producing atomically flat Ge substrates resistant to oxidation; this method involves UHV annealing and the electrochemical deposition of a well-ordered, passivating atomic layer of tellurium (Te) onto the Ge surface in order to eliminate further reoxidation of the clean, ordered, Ge substrate. We have obtained STM images in air of the Ge:Te surface and found no sign of disordered oxide formation. IR spectroscopy of monolayer films transferred onto the Sb-doped Ge crystal show little difference with spectra obtained from normal, monocrystalline Ge ATR crystals.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian W. Gregory, Brian W. Gregory, Susan Stephens, Susan Stephens, Richard A. Dluhy, Richard A. Dluhy, Sajan Thomas, Sajan Thomas, John Stickney, John Stickney, Lawrence A. Bottomley, Lawrence A. Bottomley, } "Preparation of atomically smooth Ge substrates for combined IR spectroscopy and scanning probe microscopy of organic monolayers", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); doi: 10.1117/12.166681; https://doi.org/10.1117/12.166681
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