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15 September 1993 Reactively sputtered coherent TiN process for sub-0.5-μm technology
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TiN films were sputtered deposited through a collimating medium under different conditions where the sputter target was maintained in nitrided and non-nitrided modes. In-situ rapid thermal (RTP) annealing was done in an applied materials metal anneal chamber (MAC) integrated with the Endura physical vapor deposition (PVD) system. The barrier properties of these films were evaluated for tungsten plug application. Contact resistances and junction leakage data are presented. It is seen that the TiN films deposited in the non-nitrided mode possess excellent barrier properties. This method of deposition offers significantly improved wafer throughputs for coherent sputtering of TiN. The MAC offers an excellent alternative to the conventional furnace annealing approach for contact silicidation and provides a means for improving productivity.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Girish A. Dixit, Peter J. Wright, Scott Poarch, Robert H. Havemann, Ken Ngan, Jaim Nulman, H. Kieu, and A. Tepman "Reactively sputtered coherent TiN process for sub-0.5-μm technology", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993);


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