15 September 1993 Simplified air bridge technique using photoresist UV stabilization process
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Abstract
Due to their favorable structural and electrical properties, air bridges are used extensively by silicon and GaAs monolithic microwave integrated circuit (MMIC) designers. Fabrication of such structures using the conventional techniques is complex. In this paper novel construction of air bridge structures of up to 7.5 micrometers high using an ultra violet (UV) stabilized bi-layer photoresist process, evaporated metal scheme, and lift-off patterning procedure, is realized. Deep UV stabilization of positive photo resist is discussed. Removal of the hardened resist via organic photo resist stripper is addressed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Tajadod, Linda J. Insalaco, "Simplified air bridge technique using photoresist UV stabilization process", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); doi: 10.1117/12.156524; https://doi.org/10.1117/12.156524
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