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15 February 1994 Application of RTA to a 0.8-μm BiCMOS process
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Abstract
RTA has been established as a key process element in a sub-micron BiCMOS flow. The major advantage of RTA is that a temperature pulse > 1000 degree(s)C can be used to break-up the interfacial oxide in the polysilicon emitter contact to provide enhanced current gain with low-emitter resistance but with little impact on the CMOS. The RTA emitter anneal also serves to simultaneously flow BPSG to planarize the wafer prior to metallization. Contact reflow is also advantageous for a tapered structure to improve metal step-coverage.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert H. Reuss "Application of RTA to a 0.8-μm BiCMOS process", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167345
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