15 February 1994 Application of a cluster tool for control of bipolar polysilicon emitter transistor characteristics
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Abstract
A cluster tool technique featuring a vapor HF clean followed by controlled growth of a thin interfacial oxide prior to polysilicon deposition is described. The tool is used in the fabrication of polysilicon emitter contact bipolar transistors. Parametric data show that base current and beta vary systematically with oxide thickness but other device parameters remain unchanged. An initial assessment of run-to-run-process reproducibility is also described. The tool has significant potential for future BiCMOS processes which will require precision control of the interfacial layer and low- temperature processing.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert H. Reuss and Chris J. Werkhoven "Application of a cluster tool for control of bipolar polysilicon emitter transistor characteristics", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167330; https://doi.org/10.1117/12.167330
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