Charge-buildup damage to gate oxide

Calvin Gabriel

doi:10.1117/12.167344

15 February 1994 Charge-buildup damage to gate oxide

Calvin Gabriel

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167344
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

`Antenna' structures over thick oxide were used to detect charge buildup damage to gate oxide, and gate leakage was measured to characterize the extent of damage. Polycide, metal 1, and metal 3 antennas with both area-intensive and edge-intensive configurations were included. After processing through a full triple-level metal, 135 angstroms gate oxide, 0.6 micrometers CMOS flow, individual 5 micrometers X 1 micrometers transistors (over gate oxide which had been stressed by the charge collected through an attached antenna during wafer fabrication) were measured and considered damaged if a current > 1 nA leaked through the oxide when a 5.5 V stress was applied to the gate during testing.

Citation Download Citation

Calvin Gabriel "Charge-buildup damage to gate oxide", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167344

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