Comparison of rapid thermal processing and furnace processing for quarter-micrometer CMOS

Badih El-Kareh; Ashwin Ghatalia; Mark D. Kellam; Philippe Maillot; Carlton M. Osburn; Xiaoqiang Zhang

doi:10.1117/12.167352

15 February 1994 Comparison of rapid thermal processing and furnace processing for quarter-micrometer CMOS

Badih El-Kareh, Ashwin Ghatalia, Mark D. Kellam, Philippe Maillot, Carlton M. Osburn, Xiaoqiang Zhang

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167352
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

A comparison was made between rapid-thermal processing and furnace processing with respect to gate oxidation, polysilicon sidewall oxidation, and junction activation anneal. NMOS and PMOS structures with N⁺ polysilicon gates, 6.5 nm gate oxide, and 70 nm source/drain junction depths were processed in parallel, using one-mask FET test structures to define MOSFETs with channel lengths down to 0.18 micrometers . Good NMOS device characteristics and low junction leakage were observed for all experimental combinations. Rapid-thermal and furnace oxidation exhibited similar gate-oxide breakdown characteristics.

Citation Download Citation

Badih El-Kareh, Ashwin Ghatalia, Mark D. Kellam, Philippe Maillot, Carlton M. Osburn, and Xiaoqiang Zhang "Comparison of rapid thermal processing and furnace processing for quarter-micrometer CMOS", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167352

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