High-density plasma etching: a gate oxide damage study

Calvin Gabriel

doi:10.1117/12.167347

15 February 1994 High-density plasma etching: a gate oxide damage study

Calvin Gabriel

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167347
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

To compare the damaging effect on gate oxide of polycide etching in several commercial implementations of conventional and high density plasma sources, a study was conducted using test devices consisting of a variety of large area-intensive and edge-intensive capacitors. The plasma sources compared during polycide etch included rf diode, rf triode, rf magnetically-enhanced reactive ion etch, microwave electron cyclotron resonance, and rf inductively-coupled plasma. Processes on the etchers used in this study were not necessarily optimized for damage, and improvements could probably be achieved with further work. Furthermore, the damage measurements made for one type of source are not expected to characterize other etchers having plasma sources based on similar technology.

Citation Download Citation

Calvin Gabriel "High-density plasma etching: a gate oxide damage study", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167347

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