15 February 1994 High-selectivity magnetically enhanced reactive ion etching of boron nitride films
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Abstract
Oxygen and tetrafluorocarbon magnetically enhanced reactive ion etching (MERIE) of plasma chemical vapor deposited boron nitride (BN) and silicon boron nitride (SiBN) was studied for both blanket and submicron patterned films. The relative etch selectivities of the BN and SiBN to oxide and nitride were determined. In general, oxygen-rich O2/CF4 MERIE produce very high etch selectivity results while maintaining vertical etch profiles. This etch process expands the potential for use of BN/SiBN in fabrication of sub-half micron devices.
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Donna R. Cote, Donna R. Cote, Sonny Nguyen, Sonny Nguyen, David Dobuzinsky, David Dobuzinsky, Cathy Basa, Cathy Basa, Bernhard Neureither, Bernhard Neureither, } "High-selectivity magnetically enhanced reactive ion etching of boron nitride films", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167340; https://doi.org/10.1117/12.167340
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