Magnetically enhanced reactive ion etching of silylated resist in O2/Ar mixtures

Myung-Seon Kim; Jin-Woong Kim; Jun-mo Kim; Yeo-Song Seol; Hae-Sung Park; Soo-Han Choi

doi:10.1117/12.167338

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15 February 1994 Magnetically enhanced reactive ion etching of silylated resist in O₂/Ar mixtures

Myung-Seon Kim; Jin-Woong Kim; Jun-mo Kim; Yeo-Song Seol; Hae-Sung Park; Soo-Han Choi

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Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167338
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

This study describes the etching behavior of the silylated resist in a magnetically enhanced reactive ion etcher under the pressure ranges from 3 to 10 mTorr. In a pure oxygen plasma, the resist undercut beneath the silylated mask layer and isotropic resist profile were generated independent of etch conditions. Compared to the tri-level-resist process, the resist undercut tended to be reduced in the top imaging process by silylation. It was found that the addition of Ar to an O₂-plasma was effective to reduce the resist undercut due to the consumption of the silylated mask layer. However, in an Ar-rich plasma, the resist profiles appeared to be positively sloped by the excessive consumption of the silylated resist.

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Myung-Seon Kim, Jin-Woong Kim, Jun-mo Kim, Yeo-Song Seol, Hae-Sung Park, and Soo-Han Choi "Magnetically enhanced reactive ion etching of silylated resist in O₂/Ar mixtures", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167338; https://doi.org/10.1117/12.167338

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