Native oxide removal on Si surface by NF3-added hydrogen plasma downstream treatment

Jun Kikuchi; Masao Iga; Shuzo Fujimura; Hiroshi Yano

doi:10.1117/12.167335

15 February 1994 Native oxide removal on Si surface by NF₃-added hydrogen plasma downstream treatment

Jun Kikuchi, Masao Iga, Shuzo Fujimura, Hiroshi Yano

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167335
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

NF₃ was injected into the downstream of H₂ + H₂O plasma to produce etchant for SiO₂ without dissociating NF₃ in order to minimize residual fluorine, and native oxide on Si(111) surfaces was removed by the downstream treatment. ATR FT-IR measurement showed that native oxide on the Si surface was removed and a hydrogen terminated surface was obtained. AES measurement revealed that residual fluorine was below detection limits.

Citation Download Citation

Jun Kikuchi, Masao Iga, Shuzo Fujimura, and Hiroshi Yano "Native oxide removal on Si surface by NF₃-added hydrogen plasma downstream treatment", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167335

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