15 February 1994 Process modification to reduce damage to reactive ion etched surfaces
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Abstract
An experimental investigation was carried out to verify the effect of process modification to surface charging effects in reactive ion etching. It was observed that addition of certain percentage of N2 reduces the surface damage during reactive ion etching of silicon in a SF6 + O2 plasma even though the N2 additive improved the etch rate and selectivity by 44 - 64%.
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Durga Misra, Durga Misra, O. W. Purbo, O. W. Purbo, C. R. Selvakumar, C. R. Selvakumar, "Process modification to reduce damage to reactive ion etched surfaces", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167346; https://doi.org/10.1117/12.167346
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