15 February 1994 Process modification to reduce damage to reactive ion etched surfaces
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An experimental investigation was carried out to verify the effect of process modification to surface charging effects in reactive ion etching. It was observed that addition of certain percentage of N2 reduces the surface damage during reactive ion etching of silicon in a SF6 + O2 plasma even though the N2 additive improved the etch rate and selectivity by 44 - 64%.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Durga Misra, Durga Misra, O. W. Purbo, O. W. Purbo, C. R. Selvakumar, C. R. Selvakumar, "Process modification to reduce damage to reactive ion etched surfaces", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167346; https://doi.org/10.1117/12.167346

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