Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control

Bruce W. Peuse; Allan Rosekrans

doi:10.1117/12.167351

15 February 1994 Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control

Bruce W. Peuse, Allan Rosekrans

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167351
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

An emissivity independent method of temperature control for rapid thermal processing of silicon wafers is demonstrated. In-situ wafer temperature is determined by measurement of wafer thermal expansion via a laser autofocus mechanism. A closed loop temperature control system based on this technique is integrated into a commercial rapid thermal processor with fully automatic wafer handling capability. A preliminary test using a titanium silicidation process were performed using wafer expansion thermometry. The results of this test demonstrate that this technique can provide improved wafer to wafer process repeatability.

Citation Download Citation

Bruce W. Peuse and Allan Rosekrans "Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167351

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