15 February 1994 Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control
Author Affiliations +
Abstract
An emissivity independent method of temperature control for rapid thermal processing of silicon wafers is demonstrated. In-situ wafer temperature is determined by measurement of wafer thermal expansion via a laser autofocus mechanism. A closed loop temperature control system based on this technique is integrated into a commercial rapid thermal processor with fully automatic wafer handling capability. A preliminary test using a titanium silicidation process were performed using wafer expansion thermometry. The results of this test demonstrate that this technique can provide improved wafer to wafer process repeatability.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce W. Peuse, Bruce W. Peuse, Allan Rosekrans, Allan Rosekrans, } "Rapid themal processing using in-situ wafer thermal expansion measurement for temperature control", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167351; https://doi.org/10.1117/12.167351
PROCEEDINGS
10 PAGES


SHARE
Back to Top