15 February 1994 Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer
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Abstract
The rapid thermal chemical vapor deposition of heavily boron-doped Ge layers on silicon substrates is characterized and optimized for the purpose of ultrashallow junction applications. Incorporation of a very high concentration of boron in the Ge layer is observed with a moderate flow rate (2 - 20 sccm) of 1% B2H6 in hydrogen. The surface coverage of the B:Ge layer depends strongly on the B2H6 flow rate, favoring higher content of boron for better coverage. The substrate temperature during deposition also shows a strong effect on the film morphology with 550 degree(s)C yielding the most uniform surface.
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Byung G. Park, Byung G. Park, Clifford A. King, Clifford A. King, David J. Eaglesham, David J. Eaglesham, T. W. Sorsch, T. W. Sorsch, B. Weir, B. Weir, H. S. Luftman, H. S. Luftman, Jeffrey Bokor, Jeffrey Bokor, Y. O. Kim, Y. O. Kim, } "Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); doi: 10.1117/12.167333; https://doi.org/10.1117/12.167333
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