Ultrashallow p+-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer

Byung G. Park; Clifford A. King; David J. Eaglesham; T. W. Sorsch; B. Weir; H. S. Luftman; Jeffrey Bokor; Y. O. Kim

doi:10.1117/12.167333

15 February 1994 Ultrashallow p⁺-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer

Byung G. Park, Clifford A. King, David J. Eaglesham, T. W. Sorsch, B. Weir, H. S. Luftman, Jeffrey Bokor, Y. O. Kim

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167333
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

The rapid thermal chemical vapor deposition of heavily boron-doped Ge layers on silicon substrates is characterized and optimized for the purpose of ultrashallow junction applications. Incorporation of a very high concentration of boron in the Ge layer is observed with a moderate flow rate (2 - 20 sccm) of 1% B₂H₆ in hydrogen. The surface coverage of the B:Ge layer depends strongly on the B₂H₆ flow rate, favoring higher content of boron for better coverage. The substrate temperature during deposition also shows a strong effect on the film morphology with 550 degree(s)C yielding the most uniform surface.

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Byung G. Park, Clifford A. King, David J. Eaglesham, T. W. Sorsch, B. Weir, H. S. Luftman, Jeffrey Bokor, and Y. O. Kim "Ultrashallow p⁺-n junctions formed by diffusion from an RTCVD-deposited B:Ge layer", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167333

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