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15 February 1994 Variable energy neutral beam design and kinetic energy etching
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Abstract
A simple flange-mounted neutral beam source is invented to produce a low energy nonthermalized fast neutral radical beam. This variable energy neutral radical beam can activate the SiO2 or Si surface for chemical reaction depending on the set incident energy and the chemical system chosen. The fast neutral radical beam energy is continuously adjustable (2 eV < Ek < 200 eV). The beam flux is typically 5 X 1015 cm-2 sec-1 (approximately 4 L) and higher beam flux (e.g., approximately 50 L) can be obtained by varying the plasma and the neutralizer parameters. An uniform large diameter plasma is also made for the production of neutral beam covering 5' wafer and larger. Large diameter neutral beam single wafer reactor is feasible with off-the-shelf pumping technology.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lee Chen "Variable energy neutral beam design and kinetic energy etching", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167334
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