The porous silicon photodetector shows high band and high sensitivity properties. The porous silicon layer being the
top layer of porous silicon photodetector, and the pore size distribution of porous silicon result in high band detectivity.
Various porosities corresponding to various silicon wires would respond to various wavelengths of incident light.The high
sensitivity is attributed to the textured surface, the direct band of porous silicon and the porous silicon layer thickness
controllability of absorption region of metal-PS-silicon photodetector. The textured surface of porous silicon would reduce
the reflection of incident light which would enhance the sensitivity of porous silicon photodetector.