Characteristics and performance of Ge:Ga far-infrared photoconductors for space applications

N. Hiromoto

doi:10.1117/12.2298450

30 August 1993 Characteristics and performance of Ge:Ga far-infrared photoconductors for space applications

N. Hiromoto

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21040I (1993) https://doi.org/10.1117/12.2298450
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

Ge:Ga far-infrared photoconductors with dimension of 0.5-mm3 cubehave been fabricated for space astronomical applications. The detec- tors have excellent detectivity at 2K operation under low photon- background, and also good characteristics such as almost no spikenoise, small change in responsivity depending on background-photoninflux, almost no hook response, and small amplitude of slow transientresponse. We have found that reponsivity to chopped infrared light issuppressed at higher bias electric field, while the responsivity tostep change in illumination (DC response) increases normally.

Citation Download Citation

N. Hiromoto "Characteristics and performance of Ge:Ga far-infrared photoconductors for space applications", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040I (30 August 1993); https://doi.org/10.1117/12.2298450

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