30 August 1993 Characteristics and performance of Ge:Ga far-infrared photoconductors for space applications
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21040I (1993) https://doi.org/10.1117/12.2298450
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
Ge:Ga far-infrared photoconductors with dimension of 0.5-mm3 cubehave been fabricated for space astronomical applications. The detec- tors have excellent detectivity at 2K operation under low photon- background, and also good characteristics such as almost no spikenoise, small change in responsivity depending on background-photoninflux, almost no hook response, and small amplitude of slow transientresponse. We have found that reponsivity to chopped infrared light issuppressed at higher bias electric field, while the responsivity tostep change in illumination (DC response) increases normally.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Hiromoto, "Characteristics and performance of Ge:Ga far-infrared photoconductors for space applications", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040I (30 August 1993); doi: 10.1117/12.2298450; https://doi.org/10.1117/12.2298450
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