30 August 1993 Effects of ionising radiation in Ge:Ga and Ge:Be far-infrared photoconductors
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21040J (1993) https://doi.org/10.1117/12.2298451
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
Doped germanium photoconductors cooled to temperatures —3 K are the most sensitive detectors for wavelengths >30pm . However under very low far-infrared (FIR.) backgrounds —fW, expected in-flight on the ISO LWS, these detectorscan exhibit non-linear behaviour which can severely compromise the overall sensitivity. These non-linear effects can bebroadly catagorised into two types.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. C. Price, "Effects of ionising radiation in Ge:Ga and Ge:Be far-infrared photoconductors", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040J (30 August 1993); doi: 10.1117/12.2298451; https://doi.org/10.1117/12.2298451
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