30 August 1993 New hot-carrier effects in submicron structures for infraredand millimeter wave receivers
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21040N (1993) https://doi.org/10.1117/12.2298455
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
Advances in technology of submicron semiconductor structures make it possible to de- velop a great variety of novel non-conventional Ohotoreceivers. Even if consideringthe classical effects only, one can see that various kinds of the effects could takeplace in the structures of that scale. The nature of the effect depends on relationsbetween the device active layer thickness a and the main physical lengths whichdescribe the relaxation processes in a semiconductor. For submicron structures, therelations
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir B. Yurchenko, Vladimir B. Yurchenko, } "New hot-carrier effects in submicron structures for infraredand millimeter wave receivers", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040N (30 August 1993); doi: 10.1117/12.2298455; https://doi.org/10.1117/12.2298455
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