30 August 1993 Transverse MIR fast reponse in PbSe films
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21041N (1993) https://doi.org/10.1117/12.2298491
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
Anisotropic semiconductor or semimetal films can produce large transverse voltage under lightening. PbSeand PbS films show a room temperature intense sub nsec response ( - V/MW) in the 10µm region due to freecarrier photon drag ,but the direct matched response on a 50 LI impedance is lower ( - 0.1 V/MW for lcm2film ) due to the film resistance ( > ICQ) . CO2 700ps mode locked pulses are easily detected in the scope limit .
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Marchetti, "Transverse MIR fast reponse in PbSe films", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21041N (30 August 1993); doi: 10.1117/12.2298491; https://doi.org/10.1117/12.2298491
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