A far infra-red active medium based on shallow acceptor states in semiconductors

V. N. Shastin

doi:10.1117/12.2298534

30 August 1993 A far infra-red active medium based on shallow acceptor states in semiconductors

V. N. Shastin

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21042U (1993) https://doi.org/10.1117/12.2298534
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

Theoretical proposals concerning far-infrared activity based on shallow acceptor state opticaltransitions in p-Ge and p-Si semiconductors are discussed. Preliminary experimental investigationswill be presented.

Citation Download Citation

V. N. Shastin "A far infra-red active medium based on shallow acceptor states in semiconductors", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21042U (30 August 1993); https://doi.org/10.1117/12.2298534

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