30 August 1993 A far infra-red active medium based on shallow acceptor states in semiconductors
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21042U (1993) https://doi.org/10.1117/12.2298534
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
Theoretical proposals concerning far-infrared activity based on shallow acceptor state opticaltransitions in p-Ge and p-Si semiconductors are discussed. Preliminary experimental investigationswill be presented.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. N. Shastin, "A far infra-red active medium based on shallow acceptor states in semiconductors", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21042U (30 August 1993); doi: 10.1117/12.2298534; https://doi.org/10.1117/12.2298534
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