FIR multiphoton absorption and photon drag effects in degenerate valence band semiconductors

S. D. Ganichev

doi:10.1117/12.2298546

30 August 1993 FIR multiphoton absorption and photon drag effects in degenerate valence band semiconductors

S. D. Ganichev

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 210436 (1993) https://doi.org/10.1117/12.2298546
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

Intraband linear-circular multiphoton dichroism of far infrared absorption in p-Ge has been observed for thefirst time. Previously this nonlinear optical phenomenon was observed only under the valence-conductioninterband electronic transitions induced by IR or visible-range radiation. Experimentally, the dependencies of theoptical transmission and the photon drag effect on the FIR radiation (X = 90 gm) intensity and polarisation havebeen investigated in p-type Ge crystals. A polarisation dependent sign inversion of the photon drag effect withincreasing radiation intensity has been also observed.

Citation Download Citation

S. D. Ganichev "FIR multiphoton absorption and photon drag effects in degenerate valence band semiconductors", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210436 (30 August 1993); https://doi.org/10.1117/12.2298546

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