30 August 1993 Third order nonlinearities in semiconductors at FIR wavelengths
Author Affiliations +
Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21043D (1993) https://doi.org/10.1117/12.2298553
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The power dependence of third harmonic generation from p-Si at an incident frequency of 40 cm-1 has been investigated,using an alternative design of waveguide high pass filter. Significant deviations from the expected cube dependence ofharmonic energy on incident energy were observed. at 300 K and 4.2 K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. G. Huggard, "Third order nonlinearities in semiconductors at FIR wavelengths", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21043D (30 August 1993); doi: 10.1117/12.2298553; https://doi.org/10.1117/12.2298553
PROCEEDINGS
2 PAGES


SHARE
RELATED CONTENT

Space-time correlation filters for human action detection
Proceedings of SPIE (March 19 2013)
Density of modes maps for design of the photonic crystal...
Proceedings of SPIE (September 25 2013)
Clock Recovery (Timing Extraction)
Proceedings of SPIE (January 01 1987)
No-touch pulse measurement by laser triangulation
Proceedings of SPIE (April 25 2005)
Far-Infrared Nonlinear Optics
Proceedings of SPIE (September 26 1986)

Back to Top