30 August 1993 Third order nonlinearities in semiconductors at FIR wavelengths
Author Affiliations +
Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21043D (1993) https://doi.org/10.1117/12.2298553
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The power dependence of third harmonic generation from p-Si at an incident frequency of 40 cm-1 has been investigated,using an alternative design of waveguide high pass filter. Significant deviations from the expected cube dependence ofharmonic energy on incident energy were observed. at 300 K and 4.2 K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. G. Huggard, P. G. Huggard, } "Third order nonlinearities in semiconductors at FIR wavelengths", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21043D (30 August 1993); doi: 10.1117/12.2298553; https://doi.org/10.1117/12.2298553
PROCEEDINGS
2 PAGES


SHARE
RELATED CONTENT


Back to Top