30 August 1993 Third order nonlinearities in semiconductors at FIR wavelengths
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21043D (1993) https://doi.org/10.1117/12.2298553
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The power dependence of third harmonic generation from p-Si at an incident frequency of 40 cm-1 has been investigated,using an alternative design of waveguide high pass filter. Significant deviations from the expected cube dependence ofharmonic energy on incident energy were observed. at 300 K and 4.2 K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. G. Huggard, P. G. Huggard, "Third order nonlinearities in semiconductors at FIR wavelengths", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21043D (30 August 1993); doi: 10.1117/12.2298553; https://doi.org/10.1117/12.2298553
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