Using the laser epitaxy method [1] PbTe, Pbt,SnxTe thin layerswere obtained from elements Pb,Sn, and Te, as well as periodicstructures consisting of a single-crystal PbTe and amorphousPba, grown on Folycor, mica, and BaF2. Film structure dependenceand technological parameters such as temperature, substrates,laser power, target to substrates distance, energy state oferosion plasma were determined. Results of spectral and electro- physical analysis of grown layers are presented. Absorption edge(AE) for PbTe layer, 1pm, thick, at 100K was equal to 5pm, andfor Ph Sn Te it was 7pm, which corresponds to AE of bulk samp- i-x x0les. For the periodic structure FbTe-Pba (20 periods, 120A each:070+50A) the AE is shifted towards shorter wavelengths (1,5mm),which corresponds to shift due to size quantization in the PbTecvlayer with A=0.6eV (Fig.1). Electrophysical analysis has shown
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