30 August 1993 Analysis of PbTe,Pb1-xSnxTe thin layers and multi layer PbTe-Pba quantum-well structures obtained by laser-pulse epitaxy method
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21043E (1993) https://doi.org/10.1117/12.2298554
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
Using the laser epitaxy method [1] PbTe, Pbt,SnxTe thin layerswere obtained from elements Pb,Sn, and Te, as well as periodicstructures consisting of a single-crystal PbTe and amorphousPba, grown on Folycor, mica, and BaF2. Film structure dependenceand technological parameters such as temperature, substrates,laser power, target to substrates distance, energy state oferosion plasma were determined. Results of spectral and electro- physical analysis of grown layers are presented. Absorption edge(AE) for PbTe layer, 1pm, thick, at 100K was equal to 5pm, andfor Ph Sn Te it was 7pm, which corresponds to AE of bulk samp- i-x x0les. For the periodic structure FbTe-Pba (20 periods, 120A each:070+50A) the AE is shifted towards shorter wavelengths (1,5mm),which corresponds to shift due to size quantization in the PbTecvlayer with A=0.6eV (Fig.1). Electrophysical analysis has shown
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. Alexanian, "Analysis of PbTe,Pb1-xSnxTe thin layers and multi layer PbTe-Pba quantum-well structures obtained by laser-pulse epitaxy method", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21043E (30 August 1993); doi: 10.1117/12.2298554; https://doi.org/10.1117/12.2298554
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