30 August 1993 High quality NbN-based junctions for 500GHz waveguide mixers
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21043T (1993) https://doi.org/10.1117/12.2298569
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
NbN-based tunnel junctions using a thermally oxidised Al layer as the tunnel barrier have been fabricated for 350 GHz and500 GHz testing. Choke structures containing two junctions in series have been tested in waveguide mixer blocks with E- plane tuners. Receiver noise temperatures obtained have been compared with equivalent Nb-based devices.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Blamire, "High quality NbN-based junctions for 500GHz waveguide mixers", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21043T (30 August 1993); doi: 10.1117/12.2298569; https://doi.org/10.1117/12.2298569
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