30 August 1993 Simultaneous consideration of conductor thickness and semiconductor substrate in finlines
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 210455 (1993) https://doi.org/10.1117/12.2298617
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The theory and numerical results to the effective dielectric constant and attenuation constant of bilateral finline structure, considering the conductoe thickness and semiconductor substrate is presented. The full wave analysis of the Transverse Transmission line methos in Fourier transform domain FTD is used. The numerical results are computed with a program developed in Fortran 77 language.
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Humberto Cesar Chaves Fernandes, "Simultaneous consideration of conductor thickness and semiconductor substrate in finlines", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210455 (30 August 1993); doi: 10.1117/12.2298617; https://doi.org/10.1117/12.2298617
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