30 August 1993 60 GHz microstrip-line SP4T pin diode switch
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 210459 (1993) https://doi.org/10.1117/12.2298621
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
A simple technique to determine the beam-lead PIN diodeparameters at millimeter frequency has been developed. Theobtained parameters were used in the computer-aided design ofthe novel 60 GHz microstrip single-pole four-throw (SP4T)switch. The switch offers less than 4.0 dB insertion loss (includingabout 1.0 dB waveguide to microstrip-line transition pair loss andcircuit loss) and greater than 20 dB isolation in each path.Because of its planar configuration, the switch circuit is amenableto monolithic devices integration and the circuit configurationcan be easily implemented to single pole multi-throw switchdesign.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yonghui Shu, "60 GHz microstrip-line SP4T pin diode switch", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210459 (30 August 1993); doi: 10.1117/12.2298621; https://doi.org/10.1117/12.2298621
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