30 November 2017 A FEL study of relaxation between bound donor states in Si:P
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 210476 (2017) https://doi.org/10.1117/12.2298690
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The present paper concerns a study of the life time Ti. of the excited 2p0 level of shallowdonor phosphorus in silicon at low temperatures (T /-e:dd 18 K) and in the absence of anexternal magnetic field. The experiments are performed usin g the free electron laser(FEL) FELIX of the FOM institute for plasma physics Rijnhuizen. As discussed below T1is determined from the behaviour of the is ---+ 2p0 transition at 275 cm' upon saturationwith this laser.
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K. K. Geerinck, K. K. Geerinck, "A FEL study of relaxation between bound donor states in Si:P", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210476 (30 November 2017); doi: 10.1117/12.2298690; https://doi.org/10.1117/12.2298690
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