30 November 2017 Infrared reflectivity of semiconductor magnetoplasmas
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Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21048W (2017) https://doi.org/10.1117/12.2298752
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom
Abstract
The simple expression e=1-w2p/w2 for the frequency dependence of a plasma dielectric function predict areflectivity R = 1 for 0 < co decreasing sharply from unity as co increases above the plasma frequency con. Since o.;: =P'ne2/e m infrared reflectivity of semiconductors can be used as a characterisation technique to determine [he ratio nrme,0 e'where n is the carrier density and me the effective mass. However, #41 a sagnple containing minority carriers (density p aideffective mass mh, say) this technique loses its power since then co' = neleome + pe/comh. It has been pointed out'P.that if a magnetic field is applied the parameters of both types of carrier can be determined, essentially because the Lorentzforce acts differently on electrons and holes. The dielectric tensor in the presence of a field takes a gyrotropic form quotedexplicitly elsewhere(1).
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F. Elmzughi, F. Elmzughi, } "Infrared reflectivity of semiconductor magnetoplasmas", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21048W (30 November 2017); doi: 10.1117/12.2298752; https://doi.org/10.1117/12.2298752
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