10 December 1993 Probability of electron-hole pairs dissociation in amorphous molecular semiconductors taking into account diffusion drift and tunnel motion of a hole within a Coulomb well
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Proceedings Volume 2108, International Conference on Holography, Correlation Optics, and Recording Materials; (1993); doi: 10.1117/12.165379
Event: Holography, Correlation Optics, and Recording Materials, 1993, Chernivsti, Ukraine
Abstract
The model of current carrier dissociation in the films of amorphous molecular semiconductors which are in strong electric fields has been proposed taking into account the possible hole motion within a Coulomb well by the tunnelling and diffusion drift motion. The probability of this process has also been defined. This study is an attempt to explain the experimentally stated dependencies of the quantum yield of photogeneration on temperature T according to which the extrapolation of the dependencies are crossed at one point To1.
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M. A. Zabolotny, N. P. Borolina, "Probability of electron-hole pairs dissociation in amorphous molecular semiconductors taking into account diffusion drift and tunnel motion of a hole within a Coulomb well", Proc. SPIE 2108, International Conference on Holography, Correlation Optics, and Recording Materials, (10 December 1993); doi: 10.1117/12.165379; https://doi.org/10.1117/12.165379
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KEYWORDS
Diffusion

Semiconductors

Amorphous semiconductors

Motion models

Dielectrics

Electron holes

Plutonium

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