Compound material investigation by spectroscopic ellipsometry

Vladimir G. Litovchenko; Sergey I. Frolov; Nickolai I. Klyui

doi:10.1117/12.191969

31 October 1994 Compound material investigation by spectroscopic ellipsometry

Vladimir G. Litovchenko, Sergey I. Frolov, Nickolai I. Klyui

Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191969
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine

Abstract

It is shown that spectroellipsometry (SE) as a non-destructive and contactless optical method may be used for characterization of transition layer properties, determination of optical bands positions and free-carrier concentration, evaluation of composition of compound materials and so on. A set of computer programs for the determination of dielectric functions (epsilon) ₁ ((omega) ) and (epsilon) ₂((omega) ) from ellipsometric angles (psi) and (Delta) was developed for the system with one, two and three interfaces. Computer simulations of electron band structure of monoatomic and compound materials (Si, C, SiC), including microcrystalline ones, were also made. The composition of some compound materials (SiC,HTSC) have been obtained from comparison of spectroellipsometry data with theory predictions.

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Vladimir G. Litovchenko, Sergey I. Frolov, and Nickolai I. Klyui "Compound material investigation by spectroscopic ellipsometry", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191969

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